Ziwen Wang

Title: Innovations of Ziwen Wang in Silicon-on-Insulator Technology

Introduction

Ziwen Wang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the preparation of silicon-on-insulator (SOI) materials. His innovative methods have the potential to enhance the performance of electronic devices.

Latest Patents

Ziwen Wang holds a patent titled "Method for preparing silicon-on-insulator." This patent describes a process where the first etching stop layer, the second etching stop layer, and the device layer are formed bottom-up on a p-type monocrystalline silicon epitaxial substrate. The first etching stop layer is made of intrinsic silicon, while the second etching stop layer consists of a germanium-silicon alloy, and the device layer is composed of silicon. The method includes oxidation, bonding, reinforcement, and grinding treatment, followed by selective etching. The process ensures that the thickness deviation of the first etching stop layer is controlled within 100 nm, optimizing the thickness deviation and surface roughness of the final silicon-on-insulator film to less than 5 nm and less than 4 Å, respectively.

Career Highlights

Ziwen Wang is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His work has garnered attention for its innovative approach to improving the quality and performance of silicon-on-insulator films.

Collaborations

Ziwen Wang collaborates with esteemed colleagues, including Xing Wei and Rongwang Dai, who contribute to his research endeavors. Their combined expertise enhances the development of advanced semiconductor technologies.

Conclusion

Ziwen Wang's contributions to the field of silicon-on-insulator technology exemplify the importance of innovation in semiconductor research. His patented methods pave the way for advancements in electronic device performance and reliability.