Tainan, Taiwan

Zih-Wun Peng

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: United Microelectronics Corp.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zih-Wun Peng. Retrieved from https://idiyas.com/inventor/zih-wun-peng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Zih-Wun Peng: Innovator in Semiconductor Technology

Introduction

Zih-Wun Peng is an inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor technology through his innovative approaches. Although he currently holds no granted patents, his work is focused on advancing measurement and processing methods in semiconductor applications.

Latest Patent Applications

Zih-Wun Peng has filed several notable patent applications, including:

1. **METHOD TO DERIVE THE LOCATION AND SIZE OF OXIDE SPACING AREA** - This invention provides a method to derive the location and size of oxide spacing areas. It involves dividing a tested region into grid units, calculating various pattern density metrics, and determining the location of oxide spacing areas based on specific density criteria.

2. **MATCHING METHOD FOR SEMICONDUCTOR TOPOGRAPHY MEASUREMENT AND PROCESSING DEVICE USING THE SAME** - This application outlines a matching method for semiconductor topography measurement. It includes obtaining an original surface topography curve, converting it into a variation curve, and analyzing weighted correlations to match measurement paths with layout paths.

Conclusion

Zih-Wun Peng is an emerging inventor in the semiconductor field, with innovative patent applications that aim to enhance measurement and processing techniques. His contributions reflect a commitment to advancing technology in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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