Zichen Wang

Title: Zichen Wang’s Work on Nitride Semiconductor Devices.

Introduction

Zichen Wang is an inventor based in Xiamen, China, and is associated with Xiamen San’an Integrated Circuit Co., Ltd. His patent work includes a nitride semiconductor device designed to improve radio-frequency performance.

Latest Patents

Wang is named on one patent, 1 patent, titled “Nitride Semiconductor Device.” The invention describes a device with source, drain, and gate electrodes, a dielectric material layer, and a stepped source field plate. Its two stepped portions are separated from the nitride epitaxial layer by different dielectric thicknesses, while a groove is formed in the dielectric between the field plate and the drain electrode. The design combines the stepped field plate and groove to reduce parasitic capacitances Cgd and Cds, improve RF gain, and broaden the device’s application bandwidth.

Career Highlights

Wang’s listed patent reflects work on semiconductor-device structures and their electrical performance. The available information associates him with Xiamen San’an Integrated Circuit Co., Ltd.

Collaborations

Wang’s listed coworkers include Shenghou Liu and Yihang Liang. The available information does not specify their roles in the patent.

Conclusion

Zichen Wang’s patent focuses on a nitride semiconductor device structure intended to reduce parasitic capacitance and enhance RF gain and bandwidth.