The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Mar. 13, 2024
Xiamen San'an Integrated Circuit Co., Ltd., Xiamen, CN;
Shenghou Liu, Xiamen, CN;
Yihang Liang, Xiamen, CN;
Guanying Huang, Xiamen, CN;
Zichen Wang, Xiamen, CN;
Xiguo Sun, Xiamen, CN;
XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD., Xiamen, CN;
Abstract
A nitride semiconductor device is provided. It includes a source electrode, a drain electrode, a gate electrode, a dielectric material layer and a stepped source field plate. The gate electrode is located between the source electrode and the drain electrode. The stepped source field plate is arranged in a part of the dielectric material layer and includes a first stepped portion and a second stepped portion respectively separated from a nitride epitaxial layer by different dielectric material layer thicknesses, and a part of the dielectric material layer between the stepped source field plate and the drain electrode is defined with a groove. By combining the stepped source field plate with the groove, parasitic capacitances Cgd and Cds are effectively reduced, the radio frequency (RF) gain of the device is improved, and the application bandwidth of the device is broadened.