This inventor holds 1 USPTO granted patent. Top assignee: Xiamen San'an Integrated Circuit Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yihang Liang and Nitride Semiconductor Innovation.
Introduction
Yihang Liang is an inventor associated with Xiamen, China, and Xiamen San'an Integrated Circuit Co., Ltd. His patent work includes a nitride semiconductor device designed to improve radio-frequency performance.
Latest Patents
Liang is credited with 1 patent: “Nitride Semiconductor Device.” The invention features source, drain, and gate electrodes, along with a dielectric layer and a stepped source field plate. Its two stepped portions are separated from the nitride epitaxial layer by different dielectric thicknesses, while a groove is formed in the dielectric between the field plate and the drain electrode. The design combines the stepped field plate and groove to reduce parasitic capacitances Cgd and Cds, improve RF gain, and broaden the device’s application bandwidth.
Career Highlights
Liang’s listed patent reflects work on semiconductor device structures and their electrical performance. He is associated with Xiamen San'an Integrated Circuit Co., Ltd.
Collaborations
The provided information names Shenghou Liu and Guanying Huang as Liang’s coworkers. It does not specify their roles in the patent or whether they collaborated with him on this invention.
Conclusion
Yihang Liang’s patent describes a nitride semiconductor device that uses a stepped source field plate and dielectric groove to reduce parasitic capacitance and support improved RF performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile