This inventor holds 1 USPTO granted patent. Top assignee: Xiamen San'an Integrated Circuit Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Xiguo Sun and Nitride Semiconductor Innovation.
Introduction
Xiguo Sun is an inventor based in Xiamen, China. His patent work includes a nitride semiconductor device designed to improve radio-frequency performance.
Latest Patents
Sun is associated with 1 patent, titled “Nitride Semiconductor Device.” The invention features source, drain, and gate electrodes, a dielectric layer, and a stepped source field plate with two portions separated from the nitride epitaxial layer by different dielectric thicknesses. A groove is formed in the dielectric between the field plate and the drain electrode. The combination is intended to reduce parasitic capacitances Cgd and Cds, improve RF gain, and broaden the device’s application bandwidth.
Career Highlights
Sun is associated with Xiamen San’an Integrated Circuit Co., Ltd. His patented work addresses semiconductor device structure and RF performance.
Collaborations
The provided information identifies Shenghou Liu and Yihang Liang as Sun’s coworkers. It does not specify their roles in the patent or whether they collaborated on the invention.
Conclusion
Xiguo Sun’s patent describes a stepped field-plate and groove design intended to improve the gain and bandwidth of nitride semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile