Santa Clara, CA, United States of America

Zhuangfei Chen

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhuangfei Chen. Retrieved from https://idiyas.com/inventor/zhuangfei-chen-da4tz9y0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Zhuangfei Chen and Plasma Processing Innovation.

Introduction

Zhuangfei Chen is an inventor based in Santa Clara, California, and is associated with Applied Materials, Inc. His patent work concerns pulsed-voltage techniques for controlling plasma and shaping ion energy distributions.

Latest Patents

Chen is credited with 1 patent. The patent, “Pulsed Voltage Waveform with Binary Pulses for Biasing of Plasma,” describes methods and apparatus for forming a plasma with a discrete multimodal ion energy distribution function (IEDF).

One example method generates two bursts of pulses in different pulsing states. Each burst contains multiple pulses, and the four pulse voltages are different from one another. This approach provides a way to control plasma biasing and produce distinct ion energy modes.

Career Highlights

Chen’s listed patent reflects work in plasma-processing technology, an area relevant to semiconductor manufacturing. His association with Applied Materials connects his invention to a company that develops equipment and technologies for materials engineering and chip production.

Collaborations

The patent’s listed collaborators include Shreeram Jyoti Dash and Takumi Yanagawa. Their shared work addresses pulse-waveform methods for controlling plasma behavior and ion energy distributions.

Conclusion

Zhuangfei Chen’s patent highlights a pulsed-voltage approach to plasma control, developed in collaboration with colleagues and associated with Applied Materials, Inc.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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