Shenzhen, China

Zhiyuan Leng

This inventor holds 1 USPTO granted patent. Top assignee: Shenzhen Unionmemory Information System Limited. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhiyuan Leng. Retrieved from https://idiyas.com/inventor/zhiyuan-leng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Zhiyuan Leng: Innovator in Flash Translation Layer Technology

Introduction

Zhiyuan Leng is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of flash memory technology, particularly through his innovative patent that addresses the challenges of address mapping in flash translation layers.

Latest Patents

Zhiyuan Leng holds a patent titled "Method and system of reducing address mapping space of flash translation layer." This patent outlines a method for reducing the address mapping space in flash translation layers, which includes several steps such as obtaining a mapping physical address (mpa) and an offset, determining cache hits, and modifying mapping tables. His work is crucial for enhancing the efficiency of flash memory systems.

Career Highlights

Zhiyuan Leng is currently employed at Shenzhen Unionmemory Information System Limited. His role at the company allows him to apply his expertise in flash memory technology and contribute to the development of innovative solutions in the industry.

Collaborations

Zhiyuan collaborates with talented individuals such as Jian Zuo and Yuanyuan Feng. Their teamwork fosters a creative environment that drives innovation and enhances the company's research capabilities.

Conclusion

Zhiyuan Leng's contributions to flash memory technology through his patent demonstrate his commitment to innovation in the field. His work not only advances technology but also sets a foundation for future developments in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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