Sichuan, China

Zhiyuan Bai

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Chongqing Pingwei Enterprise Co., Ltd., University of Electronic Science and Technology of China. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhiyuan Bai. Retrieved from https://idiyas.com/inventor/zhiyuan-bai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations by Zhiyuan Bai in Semiconductor Technology

Introduction

Zhiyuan Bai, an accomplished inventor based in Sichuan, China, has made significant contributions to the field of semiconductor technology. With a total of one patent, his work focuses on enhancing the performance and reliability of semiconductor devices through innovative structural designs.

Latest Patents

Zhiyuan Bai's sole patent, titled "Semiconductor structure, semiconductor assembly and power semiconductor device," introduces crucial advancements in semiconductor design. The patent describes a semiconductor structure that includes a P-type semiconductor material layer and an adjacent N-type semiconductor material layer, forming a PN junction. This invention features multiple insulating material layers positioned outside the PN junction, which vary in relative dielectric constants. These unique characteristics significantly optimize the electric field distribution during the high-voltage off-state operation of devices, thereby improving the breakdown voltage and preventing premature breakdown caused by electric field concentration at the junction edges.

Career Highlights

Bai has collaborated with reputable organizations, including the University of Electronic Science and Technology of China and Chongqing Pingwei Enterprise Co., Ltd. His academic and industrial experience has enriched his understanding of semiconductor technology and allowed him to innovate effectively within this critical field.

Collaborations

Zhiyuan Bai has worked alongside notable colleagues, including Jiangfeng Du and Zhenchao Li. These collaborations have played an essential role in advancing semiconductor research and enhancing the practical applications of their joint findings.

Conclusion

Zhiyuan Bai stands out as a distinguished inventor whose work in semiconductors has the potential to influence future technology. His patented invention not only showcases his innovative mindset but also addresses significant challenges within the semiconductor industry. As technology continues to evolve, innovators like Bai will be vital in shaping the landscape of electronics and device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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