The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Aug. 17, 2016
University of Electronic Science and Technology of China, Sichuan, CN;
Chongqing Pingwei Enterprise Co., Ltd., Chongqing, CN;
Jiangfeng Du, Sichuan, CN;
Zhenchao Li, Sichuan, CN;
Dong Liu, Sichuan, CN;
Zhiyuan Bai, Sichuan, CN;
Qi Yu, Sichuan, CN;
Shuzhou Li, Sichuan, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY, Sichuan, CN;
CHONGQING PINGWEI ENTERPRISE CO., LTD., Chongqing, CN;
Abstract
A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different. The semiconductor structure in the present invention significantly optimizes the distribution of an electric field during the off-state high voltage operation of a device, greatly improves the breakdown voltage of the device, avoids the premature breakdown of the device caused by the concentration effect of the electric field at the edge of the junction.