Company Filing History:
1 out of 316 
1 out of 2 Years Active: 2021
Title: Zhenchao Li: Innovator in Semiconductor Technology
Introduction
Zhenchao Li is a prominent inventor based in Sichuan, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances the performance of power semiconductor devices. His work is characterized by a focus on optimizing electric field distribution, which is crucial for the reliability and efficiency of electronic devices.
Latest Patents
Zhenchao Li holds a patent for a semiconductor structure, semiconductor assembly, and power semiconductor device. This invention includes a P-type semiconductor material layer and an N-type semiconductor material layer that together form a PN junction. The design incorporates multiple insulating material layers that are strategically placed outside the PN junction, with varying dielectric constants. This innovative structure significantly optimizes the electric field distribution during high voltage operations, improving the breakdown voltage and preventing premature breakdown caused by electric field concentration at the junction edge. He has 1 patent to his name.
Career Highlights
Throughout his career, Zhenchao Li has worked with notable institutions, including the University of Electronic Science and Technology of China and Chongqing Pingwei Enterprise Co., Ltd. His experience in these organizations has allowed him to collaborate with other experts in the field and contribute to advancements in semiconductor technology.
Collaborations
Zhenchao Li has collaborated with several professionals, including Jiangfeng Du and Dong Liu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in semiconductor research.
Conclusion
Zhenchao Li's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances device performance but also sets a foundation for future developments in power semiconductor devices.