University of Electronic Science and Technology of China

Chongqing Pingwei Enterprise Co., Ltd.

Zhenchao Li

Dong Liu

Shuzhou Li

Jiangfeng Du

Qi Yu

Zhiyuan Bai

A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different. The semiconductor structure in the present invention significantly optimizes the distribution of an electric field during the off-state high voltage operation of a device, greatly improves the breakdown voltage of the device, avoids the premature breakdown of the device caused by the concentration effect of the electric field at the edge of the junction.

Growing community of inventors

Sichuan, China

Zhenchao Li