Zhilyaev Yuri Vasilievich

Title: Zhilyaev Yuri Vasilievich: Nitride Crystal Growth and Semiconductor Innovation.

Introduction

Zhilyaev Yuri Vasilievich is an inventor associated with Saint Petersburg, Russia. His patent work addresses the growth of nitride single crystals on silicon wafers and the manufacture of nitride semiconductor light-emitting devices.

Latest Patents

The supplied information lists one patent for Zhilyaev: “Method of Growing a Nitride Single Crystal on Silicon Wafer, Nitride Semiconductor Light Emitting Diode Manufactured Using the Same and the Manufacturing Method.” The invention describes preparing a silicon substrate with a (111)-oriented surface, forming a first nitride buffer layer, placing an amorphous oxide film over it, and adding a second buffer layer. A nitride single crystal is then formed on the second buffer layer. The patent also concerns manufacturing a light-emitting device using this crystal-growth method.

Career Highlights

Zhilyaev’s listed professional affiliations include Samsung Electro-Mechanics Co., Ltd. and the Ioffe Physico-Technical Institute of the Russian Academy of Sciences. His patent reflects work at the intersection of crystal growth, silicon substrates, and nitride semiconductor devices.

Collaborations

His listed coworkers include Bessolov Vasiliy Nikolaevich and Hee Seok Park. Their names are associated with the professional and research context provided for Zhilyaev’s work.

Conclusion

Zhilyaev Yuri Vasilievich’s listed invention focuses on a layered approach to growing nitride crystals on silicon and applying that process to semiconductor light-emitting devices, representing a contribution to materials and device manufacturing.