The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jul. 19, 2007
Hee Seok Park, Gyunggi-do, KR;
Zhilyaev Yuri Vasilievich, St.-Petersburg, RU;
Bessolov Vasiliy Nikolaevich, St.-Petersburg, RU;
Hee Seok Park, Gyunggi-do, KR;
Zhilyaev Yuri Vasilievich, St.-Petersburg, RU;
Bessolov Vasiliy Nikolaevich, St.-Petersburg, RU;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Ioffe Physico-Technical Institute RAS, Saint Petersburg, RU;
Abstract
The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.