Company Filing History:
1 out of 7,603 
1 out of 1 Years Active: 2009
Title: Bessolov Vasiliy Nikolaevich: Innovator in Nitride Semiconductor Technology.
Introduction
Bessolov Vasiliy Nikolaevich is a notable inventor based in St.-Petersburg, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for growing nitride single crystals.
Latest Patents
Bessolov holds a patent for a "Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same." This invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light-emitting device using the same. The process involves preparing a silicon substrate with a (111) crystal orientation, forming a nitride buffer layer, and subsequently creating an amorphous oxide film and a second buffer layer before forming the nitride single crystal.
Career Highlights
Throughout his career, Bessolov has worked with prominent companies such as Samsung Electro-Mechanics Co., Ltd. and the Ioffe Physico-Technical Institute. His work has been instrumental in advancing semiconductor technologies.
Collaborations
Bessolov has collaborated with notable individuals in his field, including Hee Seok Park and Zhilyaev Yuri Vasilievich. Their joint efforts have contributed to the development of innovative technologies in semiconductor manufacturing.
Conclusion
Bessolov Vasiliy Nikolaevich is a distinguished inventor whose work in nitride semiconductor technology has paved the way for advancements in the field. His contributions continue to influence the industry and inspire future innovations.