Zhili Zhang

Title: Zhili Zhang: Innovator in Semiconductor Technology

Introduction

Zhili Zhang is a prominent inventor based in Jiangsu, China, known for his contributions to semiconductor technology. With a total of three patents to his name, he has made significant advancements in the field of laterally diffused metal oxide semiconductor devices.

Latest Patents

Zhili Zhang's latest patents include innovative designs and manufacturing methods for laterally diffused metal oxide semiconductor (LDMOS) devices. One of his patents describes a device that features a substrate with a second conductivity type and a drift region with a first conductivity type, which is opposite to the second. This design incorporates multiple layers of doped structures and doped polysilicon pillars, enhancing the device's performance. Another patent focuses on a method for preparing a laterally diffused metal oxide semiconductor device, detailing a substrate of a first conductivity type and a drift region of a second conductivity type, along with a longitudinal floating field plate array.

Career Highlights

Zhili Zhang is currently employed at CSMC Technologies Fab2 Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing efficient and effective semiconductor devices that are crucial for various applications.

Collaborations

Zhili Zhang collaborates with notable colleagues, including Jingchuan Zhao and Sen Zhang, who contribute to his innovative projects and research endeavors.

Conclusion

Zhili Zhang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.