The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Sep. 04, 2020
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate () of a first conductivity type, a drift region () of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions () of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures () arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer () disposed on an inner surface of a trench and a conductive layer () filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.