The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jul. 02, 2021
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Jingchuan Zhao, Jiangsu, CN;
Nailong He, Jiangsu, CN;
Sen Zhang, Jiangsu, CN;
Zhili Zhang, Jiangsu, CN;
Hao Wang, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method for fabricating the LDMOS device are disclosed. The device includes: a substrate () having a second conductivity type; a drift region () that has a first conductivity type and is disposed on the substrate (), wherein the first conductivity type is opposite to the second conductivity type; a plurality of layers of doped structures disposed in the drift region (), each layer of the doped structure comprising at least one doped bar () extending in a lengthwise direction of a conductive channel; and a plurality of doped polysilicon pillars () disposed in the drift region () so as to extend downward through the doped bar () of at least one of the layer of doped structures, wherein ions doped in the doped polysilicon pillars () and ions doped in the doped bar have opposite conductivity types.