Company Filing History:
Years Active: 2019-2022
Title: Innovations of Zhihua Dong in Semiconductor Technology
Introduction
Zhihua Dong is a prominent inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors. With a total of 2 patents, his work is paving the way for future innovations in electronics.
Latest Patents
Dong's latest patents include the "Enhancement-mode III-V HEMT based on all-solid-state battery" and the "III-V heterojunction field effect transistor." The enhancement-mode III-V HEMT patent describes a structure where a second semiconductor layer and a first semiconductor layer are formed on a substrate, creating a heterostructure. This design allows for effective control of a two-dimensional electron gas (2DEG) using a gate electrode, while an all-solid-state battery is integrated to manage the 2DEG in the heterostructure. The III-V heterojunction field effect transistor patent presents a novel design that combines two semiconductor layers with different bandgaps to form a heterostructure. This innovation is characterized by its simple structure, straightforward preparation process, and high reliability.
Career Highlights
Zhihua Dong is affiliated with Hangzhou Dianzi University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications and potential to enhance electronic devices.
Collaborations
Dong has collaborated with notable colleagues, including Zhiqun Cheng and Guohua Liu, contributing to a dynamic research environment that fosters innovation.
Conclusion
Zhihua Dong's contributions to semiconductor technology through his patents reflect his commitment to advancing the field. His innovative designs are set to influence the future of electronics significantly.