Shanghai, China

Zhigao Hu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: East China Normal University. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhigao Hu. Retrieved from https://idiyas.com/inventor/zhigao-hu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Zhigao Hu: Innovator in Photocurrent Spectrum Measurement

Introduction

Zhigao Hu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor materials and devices. His innovative work focuses on enhancing the measurement techniques used in evaluating photoelectric performance.

Latest Patents

Zhigao Hu holds a patent for an "Automatic Photocurrent Spectrum Measurement System Based on Fourier Infrared Spectrometer." This system includes a light source component, an environment control component, a measuring module, and a control module. It is designed to evaluate the photoelectric performance of semiconductor materials or devices under varying temperatures, voltage biases, or current biases. He has 1 patent to his name.

Career Highlights

Zhigao Hu is affiliated with East China Normal University, where he contributes to research and development in the field of photonics and semiconductor technology. His work has been instrumental in advancing the understanding of photocurrent measurements.

Collaborations

Zhigao Hu has collaborated with notable colleagues, including Junli Wang and Liyan Shang. Their combined expertise has fostered innovative research and development in their respective fields.

Conclusion

Zhigao Hu's contributions to the field of photocurrent spectrum measurement highlight his role as an influential inventor. His work continues to impact the evaluation of semiconductor materials and devices, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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