Wuxi, China

Zhenyu Lu

This inventor holds 1 USPTO granted patent and 2 published patent applications and 1 EPO patent. Top assignee: Wuxi Smart Memories Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhenyu Lu. Retrieved from https://idiyas.com/inventor/zhenyu-lu-avesjz50

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Zhenyu Lu - Innovator in Memory Technology

Introduction: Zhenyu Lu is an inventor based in Wuxi, China, known for his contributions to memory technology. He currently works at Wuxi Smart Memories Technologies Co., Ltd. Despite having no granted patents, his work in the field is noteworthy.

Latest Patent Applications: Zhenyu Lu has filed several patent applications, including "FERROELECTRIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME." This application describes a memory device that includes a plurality of memory cells and a routing interconnection structure in electric contact with the memory cells. Each memory cell consists of at least one first transistor and a cell interconnection structure formed over the transistor. The cell interconnection structure includes a cell plate at the top layer and at least one capacitor electrically coupled to the first transistor. The routing interconnection structure features a first conductive layer and a first via structure in electrical contact with the first electrode through a second conductive layer. Another application with the same title outlines a memory device that includes a plurality of memory cells and a periphery circuit, detailing the interconnection layers and routing structures involved.

Conclusion: Zhenyu Lu's innovative work in memory technology, particularly through his latest patent applications, showcases his commitment to advancing the field. His contributions, although not yet reflected in granted patents, highlight the potential for future developments in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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