The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Aug. 25, 2023
Applicant:

Wuxi Smart Memories Technologies Co., Ltd., Wuxi, CN;

Inventors:

Jianhua Sun, Wuxi, CN;

Yushi Hu, Wuxi, CN;

Meilan Guo, Wuxi, CN;

Zhenyu Lu, Wuxi, CN;

Wei Zhang, Wuxi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); G11C 11/221 (2013.01);
Abstract

A memory device includes a plurality of memory cells. Each memory cell includes at least one transistor and at least one capacitor electrically coupled to the at least one transistor. Each capacitor includes a first electrode, a second electrode surrounding at least a first portion of the first electrode, and a ferroelectric layer disposed between the first electrode and the second electrode.


Find Patent Forward Citations

Sun, Jianhua. (2026). Ferroelectric memory device and method for forming the same (U.S. Patent No. 12772455). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772455

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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