Wuxi, China

Jianhua Sun

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Wuxi Smart Memories Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jianhua Sun. Retrieved from https://idiyas.com/inventor/jianhua-sun-ih89ifk3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jianhua Sun: Inventor in Ferroelectric Memory Technology.

Introduction

Jianhua Sun is an inventor based in Wuxi, China. His listed patent work concerns ferroelectric memory devices and methods for forming them.

Latest Patents

Sun is associated with 1 patent, titled “Ferroelectric Memory Device and Method for Forming the Same.” The invention describes a memory device containing multiple memory cells, each with at least one transistor electrically coupled to at least one capacitor. Each capacitor has a first electrode, a second electrode surrounding at least part of the first electrode, and a ferroelectric layer between the electrodes.

Career Highlights

Sun is associated with Wuxi Smart Memories Technologies Co., Ltd. His patent focuses on memory-cell and capacitor structures that use a ferroelectric layer.

Collaborations

The listed coworkers associated with Sun include Yushi Hu and Meilan Guo.

Conclusion

Jianhua Sun’s recorded invention addresses the structure and formation of ferroelectric memory devices, reflecting his work in memory technology in Wuxi, China.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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