Zhenxing Yang

Title: Zhenxing Yang: Innovator in MOS Transistor Technology

Introduction

Zhenxing Yang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. With a total of 2 patents to his name, Yang's work has had a notable impact on the industry.

Latest Patents

Yang's latest patents include an integrated structure of MOS transistors having different working voltages and a method for manufacturing the same. This patent discloses an innovative approach to forming a second spacer of a second MOS transistor, which operates at a middle second working voltage. The design ensures that the GIDL leakage of the second MOS transistor meets specific requirements. Another significant patent involves bookmarks and performance history for network software deployment evaluation. This invention describes automatically generated software deployment bookmarks that track events and triggers during network software deployment operations, facilitating the evaluation of deployment progress.

Career Highlights

Throughout his career, Zhenxing Yang has worked with notable companies such as Microsoft Technology Licensing, LLC and Shanghai Huali Integrated Circuit Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor field.

Collaborations

Yang has collaborated with esteemed colleagues, including Ge Shen and Shoufu Gao. These partnerships have further enhanced his innovative capabilities and have led to the development of advanced technologies.

Conclusion

Zhenxing Yang is a distinguished inventor whose work in MOS transistor technology and network software deployment has made a significant impact on the industry. His patents reflect his commitment to innovation and excellence in the field of semiconductor technology.