The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 27, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Qi Cheng, Shanghai, CN;
Haihua Zou, Shanghai, CN;
Zhenxing Yang, Shanghai, CN;
Tao Liu, Shanghai, CN;
Qiwei Wang, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses an integrated structure of MOS transistors having different working voltages. A second spacer of a second MOS transistor having a middle second working voltage is formed by adding a third sub-spacer on the basis of a first spacer of a first MOS transistor having a relatively low first working voltage, and the first spacer is formed by stacking a first sub-spacer and a second sub-spacer. The thickness of the second spacer is adjusted via the third sub-spacer, so as to ensure that a GIDL leakage of the second MOS transistor under the second working voltage satisfies a requirement. The present application also discloses a method for manufacturing an integrated structure of MOS transistors having different working voltages.