This inventor holds 1 USPTO granted patent. Top assignee: University of Electronic Science and Technology of China. Active years: 2013.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2013
Title: **Innovative Contributions of Zhengyu Guo in Photodetector Technology**
Introduction
Zhengyu Guo is an accomplished inventor based in Chengdu, China, known for his significant contributions to the field of photodetector technology. With a focus on advancing optical detection capabilities, Guo has developed an innovative solution that integrates the properties of black silicon into a refined photodetector design.
Latest Patents
Zhengyu Guo holds a patent for a groundbreaking invention titled "Black Silicon Based Metal-Semiconductor-Metal Photodetector." This invention features a silicon substrate generously coated with a black silicon layer, which serves as an active light-sensitive area capable of responding to ultraviolet, visible, and near-infrared light. The device incorporates an interdigitated electrode pattern that can be structured in either a planar or U-shaped configuration. Notably, a thin potential barrier layer is deposited on the interdigitated electrode structure, along with an Al or transparent conductive ITO thin film on top, followed by a protective passivation layer. This ordering enhances the photodetector's efficiency and responsiveness to light.
Career Highlights
Guo is associated with the University of Electronic Science and Technology of China, where he has been instrumental in research related to semiconductor technologies and their applications in photonics. His expertise in this domain not only showcases his innovative thinking but also places him as a key figure within his academic institution.
Collaborations
In his professional journey, Zhengyu Guo collaborates closely with esteemed colleagues such as Yadong Jiang and Jing Jiang. Together, they contribute significantly to the academic community, fostering advancements in electronic and optical technologies through collective research efforts.
Conclusion
Zhengyu Guo’s inventive work in developing the black silicon based metal-semiconductor-metal photodetector exemplifies the intersection of innovation and practical application in modern technology. His contributions not only enhance our understanding of photodetectors but also pave the way for future advancements in the field. As a notable researcher and inventor, Guo continues to inspire the scientific community with his groundbreaking work.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile