The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jul. 13, 2010
Yadong Jiang, Chengdu, CN;
Jing Jiang, Chengdu, CN;
Anyuan Zhang, Chengdu, CN;
Zhengyu Guo, Chengdu, CN;
Guodong Zhao, Chengdu, CN;
Zhiming Wu, Chengdu, CN;
Wei LI, Chengdu, CN;
Yadong Jiang, Chengdu, CN;
Jing Jiang, Chengdu, CN;
Anyuan Zhang, Chengdu, CN;
Zhengyu Guo, Chengdu, CN;
Guodong Zhao, Chengdu, CN;
Zhiming Wu, Chengdu, CN;
Wei Li, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, Sichaun Province, CN;
Abstract
A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile