This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Huawei Digital Power Technologies Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Zhen Lv and a Power Semiconductor Module Invention.
Introduction
Zhen Lv is an inventor based in Shanghai, China, associated with Huawei Digital Power Technologies Co., Ltd. His patent work includes an invention focused on power semiconductor modules and their manufacture.
Latest Patents
Lv is credited with 1 patent: “Power Semiconductor Module and Manufacturing Method Thereof.” The invention describes a thermal conductive layer placed between a heat sink and a power semiconductor package. The layer may use thermal conductive material with metal bonding wires on its surface or a solid-state layer formed from curable silicone grease.
By combining the package and heat sink through this layer, the design aims to reduce stress-related damage during assembly of a complete motor driver. It also enables helium inspection of the module before final assembly, potentially improving the qualification rate during subsequent processing.
Career Highlights
The available information identifies Lv’s work through this patent and his association with Huawei Digital Power Technologies Co., Ltd. The invention addresses thermal integration, assembly reliability, and inspection in power electronics.
Collaborations
The patent is associated with Huawei Digital Power Technologies Co., Ltd. The provided information does not specify additional collaborators.
Conclusion
Zhen Lv’s patent presents a manufacturing approach intended to improve the reliability and inspection of power semiconductor modules used in motor drivers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile