Zhaohong Lv

Title: Zhaohong Lv: Innovator in Semiconductor Technology

Introduction

Zhaohong Lv is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and manufacturing method.

Latest Patents

Zhaohong Lv holds 1 patent for a semiconductor structure and method for manufacturing it. This patent describes a semiconductor structure that includes a substrate, a gate trench located in the substrate, a gate oxide layer on the side wall and bottom of the gate trench, and a gate conductive layer on the surface of the gate oxide layer. Notably, the top of the gate conductive layer is lower than the top of the gate trench. The gate oxide layer features an ion implantation area, which is crucial for the functionality of the semiconductor structure.

Career Highlights

Zhaohong Lv is currently employed at Changxin Memory Technologies, Inc. His role at the company allows him to apply his expertise in semiconductor technology and contribute to advancements in the industry. His work is instrumental in the development of innovative memory solutions.

Collaborations

Zhaohong has collaborated with notable colleagues such as Wei Chang and Chun-hsiang Chen. These partnerships have fostered a collaborative environment that enhances the innovation process within the company.

Conclusion

Zhaohong Lv is a key figure in semiconductor innovation, with a focus on developing advanced structures and manufacturing methods. His contributions are shaping the future of semiconductor technology.