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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12406858 B1

PDFFull Text
Date of Patent:
Sep. 02, 2025

Filed:

Aug. 24, 2022

Semiconductor structure and method for manufacturing semiconductor structure

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Wei Chang, Hefei, CN;

Chun-Hsiang Chen, Hefei, CN;

Zhaohong Lv, Hefei, CN;

Yongchang Zhuo, Hefei, CN;

Tieh-Chiang Wu, Hefei, CN;

Assignee:

CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 21/3115 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/4757 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01); H10D 30/65 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H01L 21/3115 (2013.01); H01L 21/26586 (2013.01); H01L 21/28158 (2013.01); H01L 21/47576 (2013.01); H01L 21/76224 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/485 (2023.02); H10D 30/658 (2025.01); H10D 30/699 (2025.01); H10D 64/027 (2025.01); H10D 64/513 (2025.01); H10B 12/315 (2023.02);
Abstract

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate trench located in the substrate; a gate oxide layer located on a side wall and a bottom of the gate trench; and a gate conductive layer located on a surface of the gate oxide layer, a top of the gate conductive layer being lower than a top of the gate trench. The gate oxide layer includes an ion implantation area. A bottom of the ion implantation area is higher than a bottom of the gate conductive layer and lower than the top of the gate conductive layer, and a top of the ion implantation area is higher than or flush with the top of the gate conductive layer.

Find Patent Forward Citations

Chang, Wei. (2025). Semiconductor structure and method for manufacturing semiconductor structure (U.S. Patent No. 12406858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12406858

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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