Company Filing History:
Years Active: 2013-2015
Title: Zhan Zhan: Innovator in Tunneling Field Effect Transistors
Introduction
Zhan Zhan is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in tunneling field effect transistors (TFETs). With a total of 7 patents to his name, Zhan has established himself as a key figure in innovation within this domain.
Latest Patents
Zhan Zhan's latest patents include groundbreaking inventions such as the "Self-adaptive composite tunneling field effect transistor and method for fabricating the same." This invention provides a novel approach to fabricating a tunneling field effect transistor, enhancing the performance of CMOS ultra-large integrated circuits (ULSI). The inventive concept involves the strategic implantation of P+ and N+ impurities to optimize the transistor's characteristics.
Another notable patent is the "Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof." This invention features a unique strip-shaped control gate structure that improves the performance of the TFET device while simplifying the preparation method. These innovations reflect Zhan's commitment to advancing semiconductor technology.
Career Highlights
Zhan Zhan is affiliated with Peking University, where he continues to engage in cutting-edge research and development. His work has garnered attention for its potential applications in modern electronics, particularly in enhancing the efficiency and performance of semiconductor devices.
Collaborations
Zhan has collaborated with notable colleagues, including Ru Huang and Qianqian Huang. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Zhan Zhan's contributions to the field of tunneling field effect transistors exemplify his innovative spirit and dedication to advancing technology. His patents not only showcase his expertise but also hold promise for future developments in semiconductor applications.