Zhan Chen

Title: Zhan Chen: Innovator in Solid-State Storage Technology

Introduction

Zhan Chen is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of solid-state storage memory, holding two patents that showcase his innovative approach to technology.

Latest Patents

Zhan Chen's latest patents include "Granular Voltage Tuning" and "Design Rule Correction System and Method." The "Granular Voltage Tuning" patent describes a system and method that operate solid-state storage memory. This system performs a first tuning process on a portion of solid-state storage memory and identifies areas that fail readability. It then conducts a second tuning process with different options to enhance performance. The "Design Rule Correction System and Method" patent presents a method for modifying the layout of multiple objects based on predetermined criteria. It defines an objective function to measure location and separation perturbations, solving a linear system to remove design rule violations while optimizing the layout.

Career Highlights

Zhan Chen has worked with prominent companies such as IBM and Pure Storage, Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in the realm of storage technology.

Collaborations

Zhan has collaborated with notable colleagues, including Fook-Luen Heng and Gustavo Enrique Tellez. Their teamwork has contributed to advancements in the technologies they have worked on together.

Conclusion

Zhan Chen's work in solid-state storage technology exemplifies his innovative spirit and dedication to improving memory systems. His patents reflect a deep understanding of the challenges in the field and offer solutions that enhance performance and reliability.