Zahra H Amini

Title: Zahra H. Amini: Semiconductor Process Inventions.

Introduction

Zahra H. Amini is an inventor associated with Cupertino, California, and Applied Materials, Inc. Her work includes semiconductor-processing inventions focused on improving etch uniformity and removing unwanted materials during integrated-circuit fabrication. She is credited with 3 patents.

Latest Patents

One of Amini’s inventions, “Near Substrate Reactant Homogenization Apparatus,” addresses uneven reactant concentrations near the edge of a substrate during etching. The apparatus is designed to reduce excess reactive species at the perimeter, helping create a more uniform concentration across the substrate and improve etch-rate uniformity. Described approaches include adjusting the temperature of a gas-absorbing area, using porous material to promote recombination of excess species, and applying a laminar gas curtain as a diffusive barrier.

Another invention, “Dry Process for Removal of Undesirable Oxide and/or Silicon Residues,” describes removing residual oxide or silicon materials from semiconductor wafers. The process uses a high-pressure, magnetically enhanced plasma etch with an NF₃-containing gas and is designed to remove residues such as silicon-rich oxide and polysilicon stringers without taking the wafer out of the vacuum apparatus used to form wafer features.

Career Highlights

Amini’s listed inventions address practical challenges in semiconductor manufacturing. They focus on controlling reactive species during etching and removing unwanted residues while maintaining process conditions used in integrated-circuit fabrication.

Collaborations

Amini’s listed coworkers include Robert B. Campbell and Robert L. Jarecki, Jr. Her company affiliation is Applied Materials, Inc.

Conclusion

Zahra H. Amini’s patent work reflects contributions to semiconductor processing, particularly etch uniformity and residue removal in integrated-circuit manufacturing.