Hefei, China

Yuzhe Wang

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuzhe Wang. Retrieved from https://idiyas.com/inventor/yuzhe-wang-j0ev3aix

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuzhe Wang: Innovator in Transistor Technology

Introduction

Yuzhe Wang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, particularly in the design of transistor units and integrated circuits. His innovative work has the potential to impact various electronic applications.

Latest Patents

Yuzhe Wang holds a patent for a "Transistor unit and array and integrated circuit thereof." This invention includes a substrate with N gates that form a closed shape on its surface. The design features a first source region shared by the N gates and multiple drain regions located on either side of the corresponding gates. The patent outlines the configuration of conductive plugs and metal layers that enhance the functionality of the transistor unit.

Career Highlights

Yuzhe Wang is currently employed at Changxin Memory Technologies, Inc., where he continues to develop cutting-edge technologies in memory and semiconductor devices. His work at the company has positioned him as a key player in advancing memory technology.

Collaborations

Yuzhe Wang collaborates with fellow inventor Xin Li, contributing to the innovative environment at Changxin Memory Technologies, Inc. Their combined expertise fosters advancements in semiconductor technology.

Conclusion

Yuzhe Wang's contributions to transistor technology exemplify the innovative spirit of modern inventors. His patent and ongoing work at Changxin Memory Technologies, Inc. highlight his role in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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