Yuyeon Kim

Title: Yuyeon Kim and Semiconductor Device Manufacturing

Introduction

Yuyeon Kim is an inventor based in Yongin-si, South Korea, and is associated with Samsung Electronics Co., Ltd. His patent work concerns semiconductor device manufacturing and the structure of semiconductor devices.

Latest Patents

Kim is named on 1 patent, titled “Method of Manufacturing Semiconductor Devices and Semiconductor Devices.” The invention describes forming a molded structure from alternating interlayer insulating and sacrificial layers, then creating channel holes and impurity-doped channel layers within that structure. A metal layer is used to form metal silicide layers at the upper ends of the channel layers. Heat treatment at 800 degrees or more crystallizes the channel layers, after which openings are formed and the sacrificial layers are removed. Conductive material fills the resulting regions to create gate electrodes. The patent specifies that, after crystallization, the metal silicide layers are positioned below the lowermost gate electrode.

Career Highlights

Kim’s listed patent reflects work on semiconductor fabrication, particularly channel-layer crystallization and gate-electrode formation in a multilayer structure. His association with Samsung Electronics connects this work to a company active in semiconductor technology.

Collaborations

Siyeong Yang and Woosung Lee are identified as Kim’s coworkers. The available information does not specify their roles in the patent or whether they collaborated with him on this invention.

Conclusion

Yuyeon Kim’s recorded invention focuses on a semiconductor manufacturing method that combines metal-silicide-assisted crystallization with gate formation in a multilayer device structure.