Method of manufacturing semiconductor devices and semiconductor devices

Abstract

A method of manufacturing a semiconductor device includes forming a molded structure by stacking interlayer insulating layers alternately with sacrificial layers on a plate layer, forming channel holes passing through the molded structure, forming channel layers doped with non-conductive impurities in the channel holes, forming a metal layer above the channel holes, forming metal silicide layers on upper ends of the channel layers using the metal layer, crystallizing the channel layers using the metal silicide layers by performing a heat treatment process at a temperature of 800 degrees or more, forming openings penetrating through the molded structure and extending in one direction, removing the sacrificial layers exposed through the openings, and forming gate electrodes, by filling regions from which the sacrificial layers have been removed, with a conductive material. After the crystallizing, the metal silicide layers are located lower than a lowermost gate electrode among the gate electrodes.