Tokyo, Japan

Yuuko Okada

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Mitsubishi Electric Corporation. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuuko Okada. Retrieved from https://idiyas.com/inventor/yuuko-okada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Yuuko Okada - Innovator in Semiconductor Manufacturing

Introduction

Yuuko Okada is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor manufacturing. Her innovative work focuses on enhancing the operability and durability of semiconductor substrates.

Latest Patents

Yuuko Okada holds a patent for a semiconductor manufacturing apparatus. The invention aims to prevent breakage and deformation of semiconductor substrates without compromising processing operability. The apparatus features a stage designed to support a semiconductor substrate, incorporating a first metal portion that contacts the substrate and an electroconductive elastic-body portion that also interacts with it. Notably, a contaminant is embedded within the electroconductive elastic-body portion, enhancing its functionality.

Career Highlights

Yuuko Okada is associated with Mitsubishi Electric Corporation, a leading company in the electronics and electrical equipment sector. Her work at Mitsubishi Electric has positioned her as a key player in advancing semiconductor technology.

Collaborations

Yuuko collaborates with Norifumi Tokuda, contributing to the development of innovative solutions in semiconductor manufacturing.

Conclusion

Yuuko Okada's contributions to semiconductor manufacturing exemplify her commitment to innovation and excellence in technology. Her patent reflects her dedication to improving the industry and enhancing the performance of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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