Sammu, Japan

Yuuichi Oishi

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Ulvac, Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuuichi Oishi. Retrieved from https://idiyas.com/inventor/yuuichi-oishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2012

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Yuuichi Oishi: Innovator in Magnetron Sputtering Technology

Introduction

Yuuichi Oishi is a notable inventor based in Sammu, Japan. He has made significant contributions to the field of magnetron sputtering technology, which is essential for various applications in thin film deposition.

Latest Patents

Oishi holds a patent for a magnetron sputtering apparatus and method. This invention aims to provide a magnetron sputtering technique that ensures an even film thickness distribution over extended periods. The apparatus includes a vacuum chamber, a cathode part that holds a target, and a direct-current power source. Additionally, it features control electrodes that independently manage potentials in the discharge space.

Career Highlights

Oishi's work at Ulvac, Inc. has positioned him as a key player in the development of advanced sputtering technologies. His innovative approach has led to improvements in the efficiency and effectiveness of film deposition processes.

Collaborations

Oishi has collaborated with notable colleagues such as Yasuhiko Akamatsu and Kyuzo Nakamura. Their combined expertise has contributed to the advancement of magnetron sputtering techniques.

Conclusion

Yuuichi Oishi's contributions to magnetron sputtering technology highlight his role as an influential inventor in the field. His patent reflects a commitment to innovation and excellence in thin film deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…