Fukuoka, Japan

Yuto Shibuta

This inventor holds 2 USPTO granted patents. Top assignee: Mitsubishi Electric Corporation. Active years: 2025-2026.


% Patents Active = 50.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Yuto Shibuta: Innovator in Semiconductor Technology

Introduction

Yuto Shibuta is a prominent inventor based in Fukuoka, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent work. His expertise and dedication to advancing technology have positioned him as a key figure in his industry.

Latest Patents

Yuto Shibuta holds a patent for a semiconductor element drive device. This invention aims to provide a technique that enables an outer portion to identify a type of error state from an identification signal at an early stage. The device includes multiple error state detection circuits that generate error signals corresponding to various error states. Additionally, it features an error state identification signal generation circuit that produces an error state identification signal with distinct waveforms for each type of error state. This signal has a pulse width smaller than each error signal, enhancing the device's efficiency in error detection.

Career Highlights

Yuto Shibuta is currently employed at Mitsubishi Electric Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has contributed to the advancement of electronic devices and systems, making them more reliable and efficient.

Collaborations

Yuto collaborates with fellow inventor Shohei Higashi, working together to push the boundaries of semiconductor technology. Their combined efforts have led to significant advancements in the field.

Conclusion

Yuto Shibuta's contributions to semiconductor technology through his innovative patent and collaboration with colleagues highlight his importance in the industry. His work continues to influence the development of more efficient electronic devices.

Profile summary based on public USPTO records.
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