This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Yutaka Hoshina: Innovator in Gallium Arsenide Technology
Introduction
Yutaka Hoshina is a prominent inventor based in Osaka, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide substrates.
Latest Patents
Hoshina holds a patent for a gallium arsenide single crystal substrate and the method of manufacturing it. This innovative substrate features a main surface with a circular shape and is characterized by specific integrated intensity ratios derived from X-ray photoelectron spectroscopy of arsenic and gallium. The substrate is designed to have a minimal number of particles, specifically two or fewer per cm of the main surface, each having a major axis of 0.16 μm or more.
Career Highlights
Yutaka Hoshina is associated with Sumitomo Electric Industries, Limited, where he has made notable advancements in semiconductor materials. His work has contributed to the enhancement of electronic devices and their performance.
Collaborations
Hoshina has collaborated with esteemed colleagues such as Makoto Kiyama and Yoshihiro Saito, furthering the research and development in his field.
Conclusion
Yutaka Hoshina's innovative work in gallium arsenide technology exemplifies the impact of dedicated inventors in advancing semiconductor applications. His contributions continue to influence the industry and pave the way for future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile