Kyoto, Japan

Yusuke Shimizu

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Rohm Gmbh. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yusuke Shimizu. Retrieved from https://idiyas.com/inventor/yusuke-shimizu-bfu72wh9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yusuke Shimizu - Innovator in Semiconductor Technology

Introduction

Yusuke Shimizu is an inventor based in Kyoto, Japan. He is currently associated with Tmt Machinery, Inc. Although he has not yet been granted any patents, his work in semiconductor technology is noteworthy. His coworker, Kinzo Hashimoto, collaborates with him in their innovative endeavors.

Latest Patent Applications

Yusuke Shimizu's latest patent application is titled "Semiconductor Device and Method of Manufacturing the Same." This application describes a semiconductor device that includes an n-type semiconductor layer, a p-type drift region formed in a surface layer portion of the semiconductor layer, an n-type body region formed in the surface layer portion of the semiconductor layer, a p-type drain region formed in a surface layer portion of the drift region, and a p-type source region formed in a surface layer portion of the body region. Additionally, it features a gate insulating film formed on a surface of the semiconductor layer and a polysilicon gate formed on the gate insulating film. The application details that a region extending from the source region to a side edge of the drift region is a channel region, and the polysilicon gate includes a p-type first portion facing at least a portion of the channel region, along with an n-type second portion facing at least a portion of the drift region.

Conclusion

Yusuke Shimizu is an emerging inventor in the field of semiconductor technology, with a focus on innovative device manufacturing methods. His contributions, although not yet recognized through granted patents, show promise for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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