This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2024.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2024
Title: Yury Vladimirovich Alymov: Innovator in Electrostatic Discharge Protection
Introduction
Yury Vladimirovich Alymov is a notable inventor based in Zelenograd, Russia. He has made significant contributions to the field of electrostatic discharge protection, showcasing his expertise through innovative patent work. His dedication to advancing technology is evident in his unique inventions.
Latest Patents
Alymov holds a patent for "Cross-domain electrostatic discharge protection." This invention involves electrostatic discharge protection circuitry that includes a transistor pass-gate. The pass-gate is designed to provide a sufficiently resistive current path between the current terminals, ensuring that devices connected to the circuit block are safeguarded from excessive voltage drops during electrostatic discharge events. This innovation is crucial for protecting sensitive electronic components from damage.
Career Highlights
Yury Alymov is associated with NXP B.V., a company known for its advancements in semiconductor technology. His work at NXP B.V. has allowed him to focus on developing solutions that enhance the reliability and safety of electronic devices. His patent reflects his commitment to improving the performance and durability of electronic systems.
Collaborations
Alymov has collaborated with notable colleagues, including Gijs Jan De Raad and Mikhail Yurievich Semenov. These partnerships have contributed to the development of innovative solutions in the field of electrostatic discharge protection.
Conclusion
Yury Vladimirovich Alymov is a distinguished inventor whose work in electrostatic discharge protection has made a significant impact on the electronics industry. His patent demonstrates his innovative spirit and dedication to enhancing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
