The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Feb. 09, 2023
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Gijs Jan de Raad, Bemmel, NL;

Mikhail Yurievich Semenov, Zelenograd, RU;

Yury Vladimirovich Alymov, Zelenograd, RU;

Elena Valentinovna Somova, Solnechnogorsk, RU;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0281 (2013.01); H01L 27/0255 (2013.01); H01L 27/0288 (2013.01); H01L 27/0296 (2013.01); H02H 9/045 (2013.01);
Abstract

Electrostatic discharge protection circuitry includes a transistor pass-gate coupled between potential source of electrostatic discharge-driven current ('ESD current') and an input node of a circuit block is configured provide a sufficiently resistive current path between a first current terminal and a second current terminal of the pass gate such that, when an amount of charge sufficient to cause an ESD event accumulates at the potential ESD current source, a sufficient voltage drop occurs across the pass gate such that devices coupled to the input node of the circuit block are protected from experiencing a voltage drop across them that is above a predetermined threshold voltage.


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