Hsinchu, Taiwan

Yuru Huang

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuru Huang. Retrieved from https://idiyas.com/inventor/yuru-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuru Huang and EUV Mask Cleaning Innovation.

Introduction

Yuru Huang is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Co., Ltd. His patent work addresses reticle cleaning within an extreme ultraviolet (EUV) photolithography scanner.

Latest Patents

Huang is named on 1 patent: “System and Method for Cleaning an EUV Mask Within a Scanner.” The invention describes an EUV photolithography system with a scanner that performs photolithography using a reticle. The scanner includes a reticle storage chamber, a backside inspection chamber, and a cleaning chamber. The cleaning chamber removes debris from the reticle’s backside while the reticle remains within the scanner.

Career Highlights

Huang’s listed patent reflects work on equipment and processes for maintaining EUV reticles during semiconductor manufacturing. Integrating cleaning into the scanner provides a dedicated way to remove backside debris as part of the photolithography workflow.

Collaborations

Huang’s listed coworker is Tzung-Chi Fu. The patent information also associates his work with Taiwan Semiconductor Manufacturing Co., Ltd.

Conclusion

Yuru Huang’s patent focuses on cleaning an EUV reticle inside a scanner, contributing to the equipment and processes used in semiconductor photolithography.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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