Kariya, Japan

Yuri Otobe

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toyoda Jidoshokki Seisakusho. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuri Otobe. Retrieved from https://idiyas.com/inventor/yuri-otobe-ec9y5wto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Innovations of Yuri Otobe in Semiconductor Technology

Introduction

Yuri Otobe is a notable inventor based in Kariya, Japan, recognized for his contributions to semiconductor technology. With a focus on enhancing the reliability and performance of semiconductor devices, Otobe has made significant strides in the field.

Latest Patents

Otobe holds a patent for a semiconductor apparatus and method for producing the same. This invention addresses the challenges associated with the durability of semiconductor chips, particularly in preventing cracks in the passivation film during cyclic temperature tests. The innovative design includes a conductive film made of doped polysilicon or metal material, strategically placed to enhance the structural integrity of the semiconductor chip.

Career Highlights

Yuri Otobe is associated with Kabushiki Kaisha Toyoda Jidoshokki Seisakusho, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more robust semiconductor devices, which are essential in various electronic applications.

Collaborations

Otobe has collaborated with esteemed colleagues, including Noriyuki Yamamoto and Minoru Kato, to further enhance the research and development of semiconductor technologies. Their combined expertise has fostered innovation within their projects.

Conclusion

Yuri Otobe's contributions to semiconductor technology exemplify the importance of innovation in enhancing device reliability. His patent and collaborative efforts continue to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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