Moscow, Russia

Yuri L Pogrebnoy

This inventor holds 4 USPTO granted patents. Top assignees: Elbrus International Limited, Sun Microsystems, Inc.. Active years: 1997-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuri L Pogrebnoy. Retrieved from https://idiyas.com/inventor/yuri-l-pogrebnoy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 38(Granted Patents)


Company Filing History:


Years Active: 1997-2002

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4 patents (USPTO):Explore Patents

Title: Innovations of Yuri L Pogrebnoy

Introduction

Yuri L Pogrebnoy is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of electronics, particularly in the development of high-speed sense amplifiers. With a total of 4 patents to his name, Pogrebnoy's work has had a considerable impact on modern technology.

Latest Patents

One of his latest patents is the "High-speed low-power sense amplifying half-latch and apparatus thereof for small-swing differential logic (SSDL)." This invention features a high-speed sense amplifier that includes a pair of cross-coupled inverters connected to intermediate nodes and differential input nodes via a control circuit. The design incorporates an accelerator transistor that forms a current path when the sense amplifier is in a sensing state, providing parallel discharge paths for the output nodes. During the precharge phase, the accelerator transistor equalizes the intermediate nodes, preparing them for the next sensing phase.

Another significant patent is the "High-speed sense amplifier capable of cascade connection." This invention presents a clocked CMOS sense amplifier designed for high-speed latching of low voltage complementary signals. It includes a controlled cross-coupled transistor structure, a control circuit, a current source, a recovery transistor, and protective transistors. The CORE circuit can be utilized to create various logic structures, employing large n-channel transistors in a discharging chain to maximize speed and output.

Career Highlights

Throughout his career, Yuri L Pogrebnoy has worked with prominent companies such as Elbrus International Limited and Sun Microsystems, Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the electronics sector.

Collaborations

Pogrebnoy has collaborated with notable individuals in his field, including Andrew V Podlesny and Guntis V Kristovsky. These partnerships have fostered innovation and have been instrumental in advancing their shared goals in technology development.

Conclusion

Yuri L Pogrebnoy's contributions to the field of electronics through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in high-speed sensing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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