Company Filing History:
Years Active: 2018
Title: Innovations of Yunfang Guan in InGaAs Film Technology
Introduction
Yunfang Guan is a notable inventor based in Guangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of InGaAs films. His innovative work has led to advancements that enhance the performance of electronic devices.
Latest Patents
Yunfang Guan holds a patent for an InGaAs film grown on a Si substrate. This invention includes a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer, and an InGaAs epitaxial film, arranged sequentially. The low temperature InGaAs buffer layer is grown at temperatures between 350°C and 380°C, while the high temperature InGaAs buffer layer is grown at temperatures between 500°C and 540°C. The combined thickness of these buffer layers ranges from 10 to 20 nm. This invention not only provides good crystal quality but also simplifies the preparation process of the InGaAs film.
Career Highlights
Yunfang Guan is affiliated with the South China University of Technology, where he continues to engage in research and development. His work has been instrumental in advancing the understanding and application of InGaAs films in various technological fields.
Collaborations
Yunfang has collaborated with esteemed colleagues such as Guoqiang Li and Fangliang Gao. Their joint efforts have contributed to the success of various projects and innovations in semiconductor technology.
Conclusion
Yunfang Guan's contributions to the field of InGaAs film technology exemplify the impact of innovative research in advancing electronic materials. His patent and ongoing work continue to influence the development of high-performance semiconductor devices.