The South China University of Technology

Yunfang Guan

Guoqiang Li

Fangliang Gao

Lei Wen

Shuguang Zhang

Jingling Li

The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer and an InGaAs epitaxial film, arranged sequentially, wherein the low temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 350&#x2dc;380&#xb0; C.; the high temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 500&#x2dc;540&#xb0; C., and the sum of the thickness of the low temperature InGaAs buffer layer and the thickness of the high temperature InGaAs buffer layer is 10&#x2dc;20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Growing community of inventors

Guangzhou, China

Yunfang Guan