The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Dec. 05, 2014
South China University of Technology, Guangzhou, Guangdong Province, CN;
Guoqiang Li, Guangzhou, CN;
Fangliang Gao, Guangzhou, CN;
Yunfang Guan, Guangzhou, CN;
Lei Wen, Guangzhou, CN;
Jingling Li, Guangzhou, CN;
Shuguang Zhang, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer and an InGaAs epitaxial film, arranged sequentially, wherein the low temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 350˜380° C.; the high temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature InGaAs buffer layer and the thickness of the high temperature InGaAs buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.