Cardiff, United Kingdom

Yun Zhou

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Spts Technologies Limited. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yun Zhou. Retrieved from https://idiyas.com/inventor/yun-zhou-a2vxmgnr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Yun Zhou

Introduction

Yun Zhou is a notable inventor based in Cardiff, GB. He has made significant contributions to the field of materials science, particularly in the deposition of silicon dioxide. His innovative methods have the potential to impact various industries that rely on advanced materials.

Latest Patents

Yun Zhou holds a patent for a method of depositing silicon dioxide onto a substrate through pulsed DC reactive sputtering. This method utilizes a sputtering gas mixture that consists primarily of oxygen and krypton. His patent is a testament to his expertise and creativity in developing new techniques for material deposition.

Career Highlights

Yun Zhou is associated with SPTS Technologies Limited, where he applies his knowledge and skills to advance the company's technological capabilities. His work at SPTS Technologies Limited has positioned him as a key player in the field of semiconductor manufacturing and materials engineering.

Collaborations

Yun Zhou has collaborated with talented individuals such as Rhonda Hyndman and Stephen Robert Burgess. These partnerships have fostered an environment of innovation and have contributed to the success of various projects within the company.

Conclusion

Yun Zhou's contributions to the field of materials science, particularly through his patent on silicon dioxide deposition, highlight his role as an influential inventor. His work continues to inspire advancements in technology and materials engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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